050-4924 rev b 3-2006 to-247 maximum ratings all ratings: t c = 25c unless otherwise specified. static electrical characteristics symbol bv dss v ds (on) i dss i gss g fs v gs (th) characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250 a) on state drain voltage 1 (i d (on) = 4.5a, v gs = 10v) zero gate voltage drain current (v ds = v dss , v gs = 0v) zero gate voltage drain current (v ds = 0.8 v dss , v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) forward transconductance (v ds = 25v, i d = 4.5a) gate threshold voltage (v ds = v gs , i d = 50ma) min typ max 500 5.0 25 250 100 23 4 35 unit volts ana mhos volts symbol v dss v dgo i d v gs p d r jc t j ,t stg t l parameterdrain-source voltage drain-gate voltage continuous drain current @ t c = 25c gate-source voltagetotal power dissipation @ t c = 25c junction to caseoperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. arf463a_bp1(g) 500500 9 30 180 0.70 -55 to 150 300 unit volts amps volts watts c/w c rf power mosfets n - channel enhancement mode the arf463ap1 and arf463bp1 comprise a symmetric pair of common source rf power transistors designed for push- pull scientific, commercial, medical and industrial rf power amplifier applications up to 100mhz. they have been optimized for both linear and high efficiency classes of operation. specified 125 volt, 81.36mhz characteristics: output power = 100 watts. gain = 15db (class ab) efficiency = 75% (class c) low cost common source rf package. low vth thermal coefficient. low thermal resistance. optimized soa for superior ruggedness. commonsource caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com arf463ap1 arf463bp1 ARF463AP1G* arf463bp1g* * g denotes rohs compliant, pb free terminal finish. 125v 100 w 100mhz g d s downloaded from: http:///
050-4924 rev b 3-2006 30 45 60 75 90 105 120 frequency (mhz) figure 1, typical gain vs frequency class c v dd = 150v p out = 150w 3025 20 15 10 50 gain (db) dynamic characteristics arf463a_bp1(g) symbol c iss c oss c rss t d(on) t r t d(off) t f characteristicinput capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time test conditions v gs = 0v v ds = 50v f = 1 mhz v gs = 15v v dd = 0.5 v dss i d = i d[cont.] @ 25c r g = 1.6 ? min typ max 670120 50 5.64.3 13.5 4.2 unit pf ns functional characteristics symbol g ps test conditions f = 81.36 mhz v gs = 0v v dd = 125v p out = 100w no degradation in output power characteristiccommon source amplifier power gain drain efficiency electrical ruggedness vswr 10:1 min typ max 13 15 70 75 unit db % 1 pulse test: pulse width < 380 s, duty cycle < 2% apt reserves the right to change, without notice, the specifications and information contained herein. 1 10 100 500 86 4 2 0 24 6 81 0 capacitance (pf) v ds , drain-to-source voltage (volts) figure 2, typical capacitance vs. drain-to-source voltage 30001000 500100 5010 .1 .5 1 5 10 50 200 i d , drain current (amperes) v ds , drain-to-source voltage (volts) figure 4, typical maximum safe operating area v gs , gate-to-source voltage (volts) figure 3, typical transfer characteristics i d , drain current (amperes) v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle t j = -55c t j = -55c t j = +125c t j = +25c t c =+25c t j =+150c single pulse operation here limited by r ds (on) c iss c oss c rss 3610 51 .5.1 1ms10ms 100ms dc 100us downloaded from: http:///
050-4924 rev b 3-2006 g ps , common source amplifier gain (db) p out , power out (watts) figure 8, typical common source amplifier gain vs power out 1412 10 86 0 40 80 120 160 160120 8040 0 02 4 681 0 p in , power in (watts) figure 7, typical power out vs power in p out , power out (watts) class c v dd = 150v f = 81.36 mhz class c v dd = 150v f = 81.36 mhz t c , case temperature (c) figure 5, typical threshold voltage vs temperature v ds , drain-to-source voltage (volts) figure 6, typical output characteristics 1.21.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 1 5 10 15 20 25 30 i d , drain current (amperes) v gs(th) , threshold voltage (normalized) arf463a_bp1(g) 6.5v 5.5v 6v 7v v gs =15v z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 7 , typical maximum effective transient thermal impedance, junction-to-case vs pulse duration note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.1 single pulse 0.02 0.05 0.2 0.01 9v 8v 7.5v 10v d=0.5 0.80.1 0.050.01 0.0050.001 1612 84 0 table 1 - typical class ab large signal input - output impedance freq. (mhz) z in ( ? ) z ol ( ? ) 2.0 13.5 2740 65 80 100 24 - j 5.07.8 - j 11 2.1 - j 6.4.74 - j 3.3 .30 + j .42.46 + j 2.0 .87 + j 3.7 55 - j 4.841 - j 24 23 - j 26.2 13.6 - j 22 6.1 - j 14.2 4.2 - j 10.7 2.7 - j 7.1 z in - gate shunted with 25 ? ?? i dq = 50ma z ol - conjugate of optimum load for 100 watts output at v dd = 125v downloaded from: http:///
050-4924 rev b 3-2006 to-247 package outline 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 5.45 (.215) bsc 3.55 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) source 2-plcs. top view arf - a device arf - b gate drain source source drain gate dimensions in millimeters and (inches)note: these two parts comprise a symmetric pair of rf power transistors and meet the same electricalspecifications. the device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. l1 c1 r2 r1 dut l2 l3 c5 c4 c6 c5 l4 125v + - rf output rf input c1 -- 820pf unelco mounted at gate lead c2-c5 -- arco 463 mica trimmer c5-c8 -- 10nf 500v cog chip l1 -- 3t #18 .3" id .25"l ~50nh l2 -- 3t #16 awg .25" id .3"l ~58nh l3 -- 10t #18 awg .25 id ~470nh l4 -- vk200-4b ferrite choke ~3uh r1-r2 -- 50 ohm 1/2w carbon dut = arf463a/b 81.36 mhz test circuit c2 c3 bias0 - 12v c7 c8 arf463a_bp1(g) p1 p1 100% sn plated e3 downloaded from: http:///
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